RMPA0967(2005) Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

RMPA0967
(Rev.:2005)

Cellular CDMA, CDMA2000-1X and WCDMA Power Edge™ Power Amplifier Module

Fairchild Semiconductor 

April 2005

RMPA0967

Cellular CDMA, CDMA2000-1X and WCDMA

Power Edge™ Power Amplifier Module

Features

■ Single positive-supply operation with low power and shut-

down modes

■ 39% CDMA/WCDMA efficiency at +28 dBm average output

power

■ 52% AMPS mode efficiency at +31 dBm output power

■ Compact lead-free compliant LCC package

(3.0 X 3.0 x 1.0 mm)

■ Internally matched to 50 Ohms and DC blocked RF

input/output

■ Meets CDMA2000-1XRTT/WCDMA performance require-

ments

■ Meets HSDPA performance requirements

■ Alternative pin-out to Fairchild RMPA0965

Device

General Description

The RMPA0967 power amplifier module (PAM) is designed for

cellular band AMPS, CDMA, CDMA2000-1X, WCDMA and

HSDPA applications. The 2 stage PAM is internally matched to

50 Ohms to minimize the use of external components and fea-

tures a low-power mode to reduce standby current and DC

power consumption during peak phone usage. High power-

added efficiency and excellent linearity are achieved using Fair-

child RF’s InGaP Heterojunction Bipolar Transistor (HBT) pro-

cess.

Functional Block Diagram

(Top View)

Vref 1

Vmode 2

RF IN 3

Vcc1 4

MMIC

DC Bias Control

Input

Match

8 GND

Output

Match

7 RF OUT

6 GND

5 Vcc2

©2005 Fairchild Semiconductor Corporation

RMPA0967 Rev. E

(paddle ground on

package bottom)

1

www.fairchildsemi.com

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