RF3809 Ver la hoja de datos (PDF) - RF Micro Devices

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RF3809

GaAs HBT PRE-DRIVER AMPLIFIER

RF Micro Devices 

RF3809

RTH_J-A versus POUT

IR scan condition: 85°C ambient, VCC=VREF=8V, RBIAS=360Ω.

37 Includes RTH of evaluation board (1-2°C/W). Result can be used as conservative number for RTH_J-C.

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POUT (dBm)

Junction Temperature versus POUT

IR scan condition: 85°C ambient, VCC=VREF=8V, RBIAS=360Ω

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0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34

POUT (dBm)

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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

Rev A4 DS080221

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