RF2312 Ver la hoja de datos (PDF) - RF Micro Devices
Número de pieza
componentes Descripción
Fabricante
RF2312 Datasheet PDF : 16 Pages
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RF2312
Application Schematic
5MHz to 50MHz Reverse Path
VCC
30 Ω 100 nF 100 nF
10 nF
RS
1 - 2 kΩ
RF IN
1
2
3
4
10 μH
8
RF OUT
10 nF
7
6
5
NOTE 1:
Optional resistor RS can be used to maintain the correct bias level at higher supply voltages. This is used to
increase output capability or linearity for signals with high crest factors.
RF IN
C1
R5
220 pF 1 - 2 kΩ
C4
TBD
R6
7.5 Ω
Application Schematic
10dB Gain
VCC= 9 - 12 V
C3
10 nF
R2
470 Ω
1
8
2
7
3
6
4
5
R1 = 21 - 30 Ω
L1
330 nH
C2
220 pF
RF OUT
R7
C5
7.5 Ω
TBD
R5 is used to maintain the correct bias level at higher supply voltages and is also required in this configuration. The RC network of R2
and C3 should be kept physically as short as possible. R2 can be adjusted as required to improve the impedance matching. R6 and
R7 reduce the typical gain by increasing the emitter resistance. L1 should be at least 200 Ω reactive at the lowest operating
frequency. C1 and C2 should be less than 10 Ω at the lowest operating frequency. C4 and C5 improve gain flatness.
3-6
Rev C6 051025
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