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RD12MVP1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

Mitsumi 

< Silicon RF Power MOS FET (Discrete) >

RD12MVP1

RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 10W

DESCRIPTION

RD12MVP1 is a MOS FET type transistor

specifically designed for VHF RF power

amplifiers applications.

OUTLINE DRAWING

8.0+/-0.2

(d)

(b)

0.2+/-0.05

7.0+/-0.2

(a)

(b)

FEATURES

•High Power Gain

Pout>10W, Gp>13dB@Vdd=7.2V,f=175MHz

•High Efficiency: 55%min. (175MHz)

•No gate protection diode

APPLICATION

For output stage of high power amplifiers in

VHF band mobile radio sets.

INDEX MARK

[Gate]

(4.5)

0.95+/-0.2

2.6+/-0.2

TOP VIEW SIDE VIEW

DETAIL A

SIDE VIEW

DETAIL A

(c)

BOTTOM VIEW

Terminal No.

(a)Drain [output]

(b)Source [GND]

(c)Gate [input]

(d)Source

UNIT:mm

NOTES:

1. ( ) Typical value

RoHS COMPLIANT

RD12MVP1 is a RoHS compliant product. RoHS compliance is indicating by the letter “G” after the Lot Marking.

This product includes the lead in high melting temperature type solders.

However, it is applicable to the following exceptions of RoHS Directions.

1.Lead in high melting temperature type solders (i.e. tin-lead older alloys containing more than85% lead.)

ABSOLUTE MAXIMUM RATINGS (Tc=25°C, UNLESS OTHERWISE NOTED)

SYMBOL

PARAMETER

CONDITIONS

RATINGS

VDSS

Drain to Source Voltage

VGS=0V

50

VGSS Gate to Source Voltage

VDS=0V

-5 to +20

ID

Drain Current

4.0

Pin

Input Power

Zg=Zl=50

1.0

Pch

Channel Dissipation

Tc=25°C

125

Tj

Junction Temperature

+150

Tstg

Storage Temperature

-40 to +125

Rthj-c Thermal Resistance

Junction to Case

1.5

Note: Above parameters are guaranteed independently.

UNIT

V

V

A

W

W

°C

°C

°C/W

Publication Date : Oct．2011

1

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