RCD075N20 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RCD075N20 Datasheet PDF : 6 Pages
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RCD075N20
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
0.1
Ta=-25°C
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
1 Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.01
0.1
1
10
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1000
800
Ta=25°C
pulsed
ID=7.5A
600
ID=3.75A
400
200
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
20
Ta=25°C
VDD=100V
ID=7.5A
Pulsed
15
10
5
0
0
5
10
15
20
25
30
Total Gate Charge : Qg [nC]
0.01
0.0
10000
1000
100
10
0.5
1.0
1.5
Source-Drain Voltage : VSD [V]
Fig.10 Switching Characteristics
tf
td(off)
VDD≒100V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
td(on)
tr
1
0.01
0.1
1
10
Drain Current : ID [A]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
Crss
1
0.01
0.1
1
10
100
Drain-Source Voltage : VDS [V]
1000
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4/5
2011.10 - Rev.A
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