RCD060N25 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
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RCD060N25 Datasheet PDF : 7 Pages
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RCD060N25
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
Ta= 125°C
Ta= 75°C
0.1
Ta= 25°C
Ta= -25°C
0.01
0.01
0.1
1
10
Drain Current : ID [A]
Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1500
1300
Ta=25°C
pulsed
1100
900
700
ID=6.0A
ID=3.0A
500
300
100
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
15
Ta=25°C
VDD=125V
ID=6A
Pulsed
10
5
0
0
5
10
15
20
25
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
Ta= 125°C
1
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.0
0.5
1.0
1.5
2.0
Source-Drain Voltage : VSD [V]
10000
1000
Fig.10 Switching Characteristics
VDD=125V
VGS=10V
RG=10Ω
Ta=25°C
Pulsed
tf
100
10
td(on)
td(off)
tr
1
0.01
0.1
1
10
Drain Current : ID [A]
Fig.12 Typical Capacitance vs. Drain-Source Voltage
10000
1000
Ta=25°C
f=1MHz
VGS=0V
Ciss
100
Coss
10
Crss
1
0.01
0.1
1
10
100
Drain-Source Voltage : VDS [V]
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4/6
2011.11 - Rev.A
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