RCD050N20 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
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Fabricante
RCD050N20 Datasheet PDF : 7 Pages
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RCD050N20
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
10
VDS=10V
pulsed
1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.01
0.1
1
10
Drain Current : ID [A]
FIg.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
1
Ta=25°C
Pulsed
0.8
ID=2.5A
0.6
ID=5.0A
0.4
0.2
0
0 2 4 6 8 10 12 14 16 18 20
Gate-Source Voltage : VGS [V]
Fig.11 Dynamic Input Characteristics
16
Ta=25°C
14 VDD=100V
ID=5A
Pulsed
12
10
8
6
4
2
0
0
2
4
6
8 10 12 14 16
Total Gate Charge : Qg [nC]
Fig.8 Source Current vs. Source-Drain Voltage
10
VGS=0V
pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0
10000
1000
0.5
1
1.5
Source-Drain Voltage : VSD [V]
Fig.10 Switching Characteristics
VDD≒100V
VGS=10V
RG=10Ω
Ta=25°C
tf
Pulsed
100
10
td(off)
td(on)
tr
1
0.01
0.1
1
10
Drain Current : ID [A]
1000
Fig.12 Typical Capacitance vs. Drain-Source Voltage
Ciss
100
Coss
10
Crss
Ta=25°C
f=1MHz
VGS=0V
1
0.01
0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
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4/6
2011.09 - Rev.A
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