RCD050N20 Ver la hoja de datos (PDF) - ROHM Semiconductor
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RCD050N20 Datasheet PDF : 7 Pages
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RCD050N20
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
2.5
Ta=25°C
Pulsed
2
VGS=10.0V
VGS=8.0V
1.5
VGS=7.0V
1
0.5
0
0
VGS=6.5V
VGS=6.0V
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
10
VDS=10V
pulsed
Ta=125°C
1
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
5
VGS=10.0V
Ta=25°C
Pulsed
4
VGS=8.0V
3
VGS=7.0V
2
VGS=6.5V
1
VGS=6.0V
0
0
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
6
VDS=10V
ID=1mA
pulsed
5
4
0.01
3
0.001
0
2
4
6
8
10
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10
VGS=10V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
0.1
1
10
Drain Current : ID [A]
2
-50
-25 0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
1.2
VGS=10V
pulsed
1
0.8
5.0A
0.6
2.5A
0.4
0.2
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
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2011.09 - Rev.A
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