RCD040N25 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
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RCD040N25 Datasheet PDF : 7 Pages
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RCD040N25
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
2
Ta=25°C
Pulsed
1.5
VGS=10.0V
VGS=8.0V
1
VGS=7.0V
0.5
0
0
0.2
0.4
0.6
0.8
1
Drain-Source Voltage : VDS [V]
Fig.3 Typical Transfer Characteristics
10
VDS=10V
pulsed
1
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
0.1
0.01
0.001
0.0
2.0
4.0
6.0
8.0
10.0
Gate-Source Voltage : VGS [V]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
10000
VGS=10V
pulsed
Ta= 125°C
Ta= 75°C
Ta= 25°C
Ta= -25°C
1000
100
0.01
0.1
1
10
Drain Current : ID [A]
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
4
Ta=25°C
Pulsed
VGS=10.0V
3
VGS=8.0V
2
1
VGS=7.0V
0
0
2
4
6
8
10
Drain-Source Voltage : VDS [V]
Fig.4 Gate Threshold Voltage vs. Channel Temperature
10
VDS=10V
ID=1mA
pulsed
8
6
4
2
0
-50 -25 0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature
2500
VGS=10V
pulsed
2000
ID=4.0A
1500
1000
ID=2.0A
500
0
-50 -25
0 25 50 75 100 125 150
Channel Temperature : Tch [℃]
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2011.11 - Rev.A
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