RB721Q-40 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
RB721Q-40 Datasheet PDF : 4 Pages
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Diodes
Schottky barrier diode
RB721Q-40
RB721Q-40
zApplications
Low current rectification
zExternal dimensions (Unit : mm)
CATHODE BAND (BLACK)
TYPE NO. (BLACK)
zFeatures
1) Glass sealed envelope. (MSD)
2) Low VF, Low IR
3) High reliability
29±1
S
2
-
2.7±0.3
φ0.4±0.1
29±1
ROHM : MSD
JEDEC : DO-34
φ1.8±0.2
zConstruction
Silicon epitaxial planar
zTaping specification s (Unit : mm)
H2
A
BLUE
L1
H1
G1
G2
E
L2
F
IVORY
H2
M記a号rk
St寸and法ard 規dim格ensi値on
value (m(mm)m)
I
T-72 52.4±1.5
Ａ T-77 26.0+0.4
'-0
B
Ｂ
5.0±0.5
Ｃ
0.5ＭＡＸ
C
Ｄ
0
Ｅ
50.4±0.4
Ｆ
0.3ＭＡＸ
G1
0.1ＭＩＮ
G2
0ＭＩＮ
H1
6.0±0.5
H2
5.0±0.5
I
0.5ＭＡＸ
L1-L2 0.6ＭＡＸ
t
3.2MIN
H1
D
t
＊H2(6mm)：BROWN
cf : cum注u)l at累iv 積e pピitッchチtoのle許ra容nc差e wはit2h02ピ0ッpチitcでh ±tha1.n5m±1m.以5m下mとする
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak （60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Forward voltage
VF
-
Reverse current
IR
-
Capacitance between terminals
Ct
-
Limits
40
40
30
200
125
-40 to +125
Typ. Max.
Unit
-
0.37
V
-
0.5
µA
2.0
-
pF
Unit
V
V
mA
mA
℃
℃
Conditions
IF=1mA
VR=25V
VR=1V , f=1MHz
Rev.A
1/3
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