R6012ANX Ver la hoja de datos (PDF) - ROHM Semiconductor

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R6012ANX

Nch 600V 12A Power MOSFET

ROHM Semiconductor 

R6012ANX

Data Sheet

Body diode electrical characteristics (Source-Drain) (Ta = 25°C)

Parameter

Symbol

Conditions

Min.

Values

Typ.

Max.

Inverse diode continuous,

forward current

Inverse diode direct current,

pulsed

Forward voltage

Reverse recovery time

Reverse recovery charge

Peak reverse recovery current

Peak rate of fall of reverse

recovery current

IS *1

ISM *2

Tc = 25°C

VSD *6

trr *6

Qrr *6

Irrm *6

VGS = 0V, IS = 12A

IS = 12A

di/dt = 100A/µs

dirr/dt Tj = 25°C

-

-

12

-

-

48

-

-

1.5

-

396

-

-

4.4

-

-

22

-

-

640

-

Unit

A

A

V

ns

µC

A

A/µs

Typical Transient Thermal Characteristics

Symbol

Value

Unit

Rth1

0.158

Rth2

0.75

K/W

Rth3

2.15

Symbol

Cth1

Cth2

Cth3

Value

0.00247

0.0317

0.485

Unit

Ws/K

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© 2012 ROHM Co., Ltd. All rights reserved.

4/13

2012.01 - Rev.B

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