R6012ANX Ver la hoja de datos (PDF) - ROHM Semiconductor

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componentes Descripción

Fabricante

R6012ANX

Nch 600V 12A Power MOSFET

ROHM Semiconductor 

R6012ANX

Absolute maximum ratings

Parameter

Drain - Source voltage slope

Data Sheet

Symbol

Conditions

dv/dt

VDS = 480V, ID = 12A

Tj = 125°C

Values

50

Unit

V/ns

Thermal resistance

Parameter

Thermal resistance, junction - case

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

Symbol

RthJC

RthJA

Tsold

Values

Unit

Min. Typ. Max.

-

-

2.5 °C/W

-

-

70 °C/W

-

-

265 °C

Electrical characteristics (Ta = 25°C)

Parameter

Symbol

Conditions

Drain - Source breakdown

voltage

V(BR)DSS VGS = 0V, ID = 1mA

Values

Unit

Min. Typ. Max.

600

-

-

V

Drain - Source avalanche

breakdown voltage

V(BR)DS VGS = 0V, ID = 12A

-

700

-

V

Zero gate voltage

drain current

VDS = 600V, VGS = 0V

IDSS Tj = 25°C

-

Tj = 125°C

-

0.1 100 µA

-

1000

Gate - Source leakage current

IGSS VGS = ±30V, VDS = 0V

-

-

±100 nA

Gate threshold voltage

VGS (th) VDS = 10V, ID = 1mA

2.5

-

4.5

V

Static drain - source

on - state resistance

VGS = 10V, ID = 6A

RDS(on) *6 Tj = 25°C

Tj = 125°C

-

0.32 0.42 Ω

-

0.6

-

Gate input resistance

RG f = 1MHz, open drain

-

8.2

-

Ω

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© 2012 ROHM Co., Ltd. All rights reserved.

2/13

2012.01 - Rev.B

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