DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

R6012ANX Ver la hoja de datos (PDF) - ROHM Semiconductor

Número de pieza
componentes Descripción
Fabricante
R6012ANX
ROHM
ROHM Semiconductor ROHM
R6012ANX Datasheet PDF : 14 Pages
First Prev 11 12 13 14
R6012ANX
Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
100
VGS = 0V
Pulsed
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
1
Ta = -25ºC
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
0.1
0.01
0
0.5
1
1.5
Source - Drain Voltage : VSD [V]
10
0.1
Ta = 25ºC
di / dt = 100A / us
VGS = 0V
Pulsed
1
10
100
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
11/13
2012.01 - Rev.B

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]