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PMEG2005AEL

0.5 A ultra low VF MEGA Schottky barrier rectifier in leadless ultra small SOD882 package

Philips Electronics 

Philips Semiconductors

PMEG2005AEL

0.5 A ultra low VF MEGA Schottky rectifier

[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating will be available on request.

6. Thermal characteristics

Table 6:

Symbol

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance from junction to

ambient

Conditions

in free air

Value

[1] [2] 500

Unit

K/W

[1] Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 µm copper strip line.

[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse

power losses PR are a significant part of the total power losses. Nomograms for determining the reverse

power losses PR and IF(AV) rating will be available on request.

7. Characteristics

Table 7: Characteristics

Tamb = 25 °C unless otherwise specified

Symbol Parameter

Conditions

Typ

VF

continuous forward

see Figure 1;

voltage

IF = 0.1 mA

25

IF = 1 mA

75

IF = 10 mA

135

IF = 100 mA

220

IF = 500 mA

375

IR

continuous reverse

see Figure 2;

current

VR = 10 V

[1]

210

VR = 20 V

370

Cd

diode capacitance

VR = 1 V; f = 1 MHz;

19

see Figure 3

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

Max Unit

60

mV

110

mV

190

mV

290

mV

440

mV

600

µA

1500 µA

25

pF

9397 750 13201

Product data sheet

Rev. 02 — 27 April 2004

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

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