PM6670S Ver la hoja de datos (PDF) - STMicroelectronics

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PM6670S

Complete DDR2/3 memory power supply controller

STMicroelectronics 

PM6670S

Electrical characteristics

Table 6. Electrical characteristics (continued)

Symbol

Parameter

Test condition

VDDQ output

VVDDQ

VDDQ output voltage, DDR3

VDDQ output voltage, DDR2

Feedback accuracy

MODE connected to AVCC,

DDRSEL tied to SGND, No load

MODE and DDRSEL connected to

AVCC, no load

Current limit and zero crossing comparator

ICSNS CSNS input bias current

Comparator offset

Rsense = 1 kΩ

Positive current limit threshold

VPGND - VCSNS

Fixed negative current limit

threshold

VZC,OFFS

Zero crossing comparator

offset

High and low side gate drivers

HGATE driver on-resistance

LGATE driver on-resistance

HGATE high state (pull-up)

HGATE low state (pull-down)

LGATE high state (pull-up)

LGATE low state (pull-down)

UVP/OVP protections and PGOOD SIGNAL (SMPS only)

OVP Over voltage threshold

UVP Under voltage threshold

Power Good upper threshold

PGOOD

Power Good lower threshold

IPG,LEAK PG leakage current

VPG,LOW PG low-level voltage

PG forced to 5 V

IPG,SINK = 4 mA

Soft start section (SMPS)

Soft-start ramp time

(4 steps current limit)

Soft-start current limit step

Values

Unit

Min Typ Max

1.5

V

1.8

-1.5

1.5

%

110 120 130 μA

-6

6

mV

120

mV

110

mV

-11

-5

1

mV

2.0

3

1.8

2.7

Ω

1.4

2.1

0.6

0.9

112 115 118

67

70

73

%

107 110 113

86

90

93

1

μA

150 250 mV

1.5

3

4

ms

30

μA

Doc ID 14432 Rev 4

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