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HYS64V32220GU-8 Ver la hoja de datos (PDF) - Infineon Technologies

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componentes Descripción
Fabricante
HYS64V32220GU-8
Infineon
Infineon Technologies Infineon
HYS64V32220GU-8 Datasheet PDF : 17 Pages
First Prev 11 12 13 14 15 16 17
HYS 64(72)V16200/3222(0)0/64220GU
SDRAM Modules
A serial presence detect storage device - E2PROM - is assembled onto the module. Information
about the module configuration, speed, etc. is written into the E2PROM device during module
production using a serial presence detect protocol (I2C synchronous 2-wire bus).
SPD-Table for 256MBit SDRAM based PC100 Modules
Byte# Description
SPD Entry
Value
Hex
32M×64 32M×64 32M×72 32M×72
one bank one bank one bank one bank
-8
-8B
-8
-8B
0
Number of SPD bytes 128
80
80
80
80
1
Total bytes in Serial PD 256
08
08
08
08
2
Memory Type
SDRAM
04
04
04
04
3
Number of Row
13
Addresses
(without BS bits)
0D
0D
0D
0D
4
Number of Column
10
Addresses (for 32M×8
SDRAMs)
0A
0A
0A
0A
5
Number of DIMM Banks 1
01
01
01
01
6
Module Data Width
64/72
40
40
48
48
7
Module Data Width
0
(cont’d)
00
00
00
00
8
Module Interface Levels LVTTL
01
01
01
01
9
SDRAM Cycle Time at 10.0 ns
CL = 3
A0
A0
A0
A0
10
SDRAM Access time
6.0 ns
from Clock at CL = 3
60
60
60
60
11
Dimm Configuration
none / ECC
00
00
02
02
12
Refresh Rate/Type
Self-Refresh, 82
82
82
82
7.8 µs
13
SDRAMwidth,Primary x8
08
08
08
08
14
Error Checking SDRAM n/a/x8
data width
00
00
08
08
15
Minimum clock delay for tCCD = 1 CLK
01
01
01
01
back-to-back random
column address
16
Burst Length supported 1, 2, 4, 8 & full 8F
8F
8F
8F
page
17
Number of SDRAM
4
banks
04
04
04
04
Semiconductor Group
12
1998-08-01

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