PBSS2515M Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS2515M Datasheet PDF : 9 Pages
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NXP Semiconductors
15 V, 0.5 A
NPN low VCEsat (BISS) transistor
600
handbook, halfpage
(1)
hFE
400
(2)
200
(3)
MLE098
0
10−1
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.2 DC current gain as a function of collector
current; typical values.
Product data sheet
PBSS2515M
1200
handbook, halfpage
VBE
(mV)
1000
800
600
400
MLE100
(1)
(2)
(3)
20010−1
1
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
10
102
103
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
103
handbook, halfpage
VCEsat
(mV)
102
(1)
(2)
10
(3)
MLE102
110−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
1200
handbook, halfpage
VBEsat
(mV)
1000
800
600
400
MLE101
(1)
(2)
(3)
20010−1
1
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
10
102
103
IC (mA)
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Sep 15
5
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