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HTG2150 Ver la hoja de datos (PDF) - Holtek Semiconductor

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componentes Descripción
Fabricante
HTG2150
Holtek
Holtek Semiconductor Holtek
HTG2150 Datasheet PDF : 38 Pages
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HTG2150
Absolute Maximum Ratings
Supply Voltage .........................................-0.3V to 3.6V
Input Voltage..............................VSS-0.3V to VDD+0.3V
Storage Temperature ............................-50°C to 125°C
Operating Temperature...............................0°C to 70°C
Note: These are stress ratings only. Stresses exceeding the range specified under ²Absolute Maximum Ratings² may
cause substantial damage to the device. Functional operation of this device at other conditions beyond those
listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliabil-
ity.
D.C. Characteristics
Symbol
VDD
IDD
ISTB1
ISTB2
VIL1
VIH1
VIL2
VIH2
VIL3
VIH3
IOH1
IOH2
IOH3
IOL1
IOL2
IOL3
RPH
Parameter
Test Conditions
VDD
Conditions
Operating Voltage
¾
¾
Operating Current (RC OSC)
3V No load, fSYS=4MHz
Standby Current With 7mA LCD Bias Option
(RTC ON, LCD ON)
3V
No load,
HALT mode
Standby Current LCD Bias Off Option
(RTC OFF, LCD OFF)
3V
No load,
HALT mode
Input Low Voltage for PA/PB
3V
¾
Input High Voltage for PA/PB
3V
¾
Input Low Voltage (INT)
3V
¾
Input High Voltage (INT)
3V
¾
Input Low Voltage (RES)
3V
¾
Input High Voltage (RES)
3V
¾
Port A, Port B Source Current
3V VOH=2.7V
Segment, Common Output Source Current 3V VOH=2.7V
PWM1/PWM2 Source Current
3V VOH=2.7V
Port A, Port B Sink Current
3V VOL=0.3V
Segment, Common Output
Sink Current
3V VOL=0.3V
PWM1/PWM2 Sink Current
3V VOH=0.3V
Pull-high Resistance of PA/PB and INT
3V
¾
Min.
2.4
¾
¾
¾
0
2.1
0
2.3
¾
¾
-1
100
-6
1.5
250
8
30
Ta=25°C
Typ. Max. Unit
¾ 3.6 V
1
2 mA
¾ 20 mA
0.5 1.5 mA
¾ 0.9 V
¾
3
V
¾ 0.7 V
¾
3
V
1.5 ¾
V
2.4 ¾
V
-2 ¾ mA
200 ¾ mA
-8 ¾ mA
4
¾ mA
500 ¾ mA
10 ¾ mA
60 120 kW
A.C. Characteristics
Symbol
Parameter
fSYS
System Clock (RC OSC)
tRES
External Reset Low Pulse Width
tSST
System Start-up Timer Period
tINT
Interrupt Pulse Width
Note: tSYS=1/fSYS
Test Conditions
VDD
Conditions
3V
¾
2.4V
¾
¾
¾
¾
Power-up or
Wake-up from HALT
¾
¾
Min.
400
400
1
¾
1
Ta=25°C
Typ. Max. Unit
¾ 4000 kHz
¾ 4000
¾ ¾ ms
1024 ¾ tSYS
¾ ¾ ms
Rev. 1.30
6
May 21, 2002

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