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EN29F800B-45T Ver la hoja de datos (PDF) - Eon Silicon Solution Inc.

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componentes Descripción
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EN29F800B-45T Datasheet PDF : 38 Pages
First Prev 31 32 33 34 35 36 37 38
Revisions List
EN29F800
A,B,C:
Preliminary
D (2001.07.03):
Table 7. Icc2 is with BYTE# and RESET# pin at full CMOS levels
Pg. 9 Logical Inhibit section now says that if CE , W E , and OE are all logical zero
(not recommended usage), it will be considered a write.
VID is everywhere changed to be VID =11.5 ± 0.5V
E (2001.07.05):
“block” changed to “sector”
LACTHUP >= 200mA line removed from first page
Deleted Sector Un/Protect flowcharts
Chip erase and Sector Erase command descriptions modified.
DQ7,DQ5,DQ3 status polling descriptions modified.
Table 12 Latchup characteristics modified
Changed P/E endurance to 100K everywhere
Changed Absolute Maximum Ratings
4800 Great America Parkway, Suite 202
38
Santa Clara, CA 95054
Rev. E, Issue Date: 2001/07/05
Tel: 408-235-8680
Fax: 408-235-8685

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