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P4C1026-25L28MB Ver la hoja de datos (PDF) - Semiconductor Corporation
Número de pieza
componentes Descripción
Fabricante
P4C1026-25L28MB
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM
Semiconductor Corporation
P4C1026-25L28MB Datasheet PDF : 10 Pages
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POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
Parameter
I
CC
Dynamic Operating Current*
Temperature
Range
Commercial
Industrial
–15 –20 –25 –35
80 75 75 75
90 80 80 80
*V
CC
= 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V.
CE
= V
IL
P4C1026
Unit
mA
mA
DATA RETENTION CHARACTERISTICS
Symbol
Parameter
Test Conditions
V
DR
I
CCDR
t
CDR
t
R†
V
CC
for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
CE
≥
V
CC
–0.2V,
V
IN
≥
V
CC
–0.2V or
V
IN
≤
0.2V
*T
A
= +125°C
§
t
RC
= Read Cycle Time
†
This parameter is guaranteed but not tested.
Typ.*
Max
Min
V
CC
=
V
CC
=
Unit
2.0V 3.0V 2.0V 3.0V
2.0
V
10
15 250 500 µA
0
ns
t
RC§
ns
DATA RETENTION WAVEFORM
Document #
SRAM127
REV E
Page 3 of10
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