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NUP2114UPXV5T1G Ver la hoja de datos (PDF) - ON Semiconductor

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NUP2114UPXV5T1G
ON-Semiconductor
ON Semiconductor ON-Semiconductor
NUP2114UPXV5T1G Datasheet PDF : 6 Pages
1 2 3 4 5 6
NUP2114 Series, SNUP2114
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
I
IF
VC VBR VRWM
IIRT VF
V
IPP
UniDirectional
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max Unit
Reverse Working Voltage
VRWM (Note 1)
5.0
V
Breakdown Voltage
VBR IT = 1 mA, (Note 2)
5.5
7.5
V
Reverse Leakage Current
IR
VRWM = 5 V
0.01
1.0
mA
Clamping Voltage
VC
IPP = 5 A (Note 3)
9.0
V
Clamping Voltage
VC
IPP = 8 A (Note 3)
10
V
Maximum Peak Pulse Current
IPP
8x20 ms Waveform
12
A
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and GND
0.8
1.0
pF
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins
0.5
pF
Clamping Voltage
VC
@ IPP = 1 A (Note 4)
12
V
Clamping Voltage
VC
Per IEC 6100042 (Note 5)
Figures 1 and 2
V
1. Surge protection devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater
than the DC or continuous peak operating voltage level.
2. VBR is measured at pulse test current IT.
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Surge current waveform per Figure 5.
5. Typical waveform. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include S-prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC6100042
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC6100042
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