NP50P06KDG Ver la hoja de datos (PDF) - NEC => Renesas Technology

Número de pieza

componentes Descripción

Fabricante

NP50P06KDG

SWITCHING P-CHANNEL POWER MOSFET

NEC => Renesas Technology 

PACKAGE DRAWING (Unit: mm)

TO-263 (MP-25ZK)

No plating

10.0±0.3

7.88 MIN.

4

4.45±0.2

1.3±0.2

0.025 to

0.25

NP50P06KDG

0.75±0.2

2.54

123

0.5±0.2

0 to 8 o

0.25

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

6

Data Sheet D18689EJ3V0DS

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