HB54A5129F1-10B(2003) Ver la hoja de datos (PDF) - Elpida Memory, Inc
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HB54A5129F1-10B Datasheet PDF : 16 Pages
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HB54A5129F1-B75B/10B
DC Characteristics 1 (TA = 0 to +70°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol Grade
max.
Unit Test condition
Notes
Operating current (ACTV-PRE) ICC0
-B75B
-10B
2096
1819
mA CKE ≥ VIH, tRC = min. 1, 2, 5
Operating current (ACTV-READ-
PRE)
ICC1
-B75B
-10B
2996
2719
mA
CKE ≥ VIH, BL = 2,
CL = 3.5, tRC = min.
1, 2, 5
Idle power down standby current ICC2P
-B75B
-10B
656
595
mA CKE ≤ VIL
Idle standby current
ICC2N
-B75B
-10B
1016
919
mA CKE ≥ VIH, /CS ≥ VIH
Active power down standby
current
ICC3P
-B75B
-10B
746
649
mA CKE ≤ VIL
EActive standby current
ICC3N
-B75B
-10B
1196
1099
mA
CKE ≥ VIH, /CS ≥ VIH
tRAS = max.
Operating current
(Burst read operation)
ICC4R
-B75B
-10B
4256
4069
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
Operating current
(Burst write operation)
ICC4W
-B75B
-10B
3896
3709
mA
CKE ≥ VIH, BL = 2,
CL = 3.5
OAuto refresh current
ICC5
-B75B
-10B
3986
3619
mA
tRFC = min.,
Input ≤ VIL or ≥ VIH
Self refresh current
ICC6
-B75B
-10B
440
433
mA
Input ≥ VCC – 0.2V
Input ≤ 0.2V.
L Notes. 1. These ICC data are measured under condition that DQ pins are not connected.
4
4
3
3
1, 2, 5, 6
1, 2, 5, 6
2. One bank operation.
3. One bank active.
4. All banks idle.
5. Command/Address transition once per one cycle.
6. Data/Data mask transition twice per one cycle.
7. The ICC data on this table are measured with regard to tCK = min. in general.
P DC Characteristics 2 (TA = 0 to +70°C, VCC, VCCQ = 2.5V ± 0.2V, VSS = 0V)
Parameter
Symbol
min.
max.
Unit
Test condition
r Input leakage current
ILI
–10
10
Output leakage current
ILO
–10
10
o Output high voltage
VOH
1.95
—
Output low voltage
VOL
—
0.35
duct Note: 1. DDR SDRAM component specification.
µA
VCC ≥ VIN ≥ VSS
µA
VCC ≥ VOUT ≥ VSS
V
IOH (max.) = –15.2mA
V
IOL (min.) = 15.2mA
Notes
1
1
Data Sheet E0090H60 (Ver. 6.0)
12
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