DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

499323 Ver la hoja de datos (PDF) - IXYS CORPORATION

Número de pieza
componentes Descripción
Fabricante
499323 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
MUBW30-12E6K
Output Inverter T1 - T6 / D1 - D6
20
mJ
16
Eon
12
8
VCE = 600 V
VGE = ±15 V
RG = 68 :
TVJ = 125°C
250
td(on) ns
200
tr
t
150
100
4.0
m3.J5
Eoff 3.0
2.5
2.0
1.5
VCE = 600 V
VGE = ±15 V
RG = 68 :
TVJ = 125°C
400
td(off) 3n5s0
300
t
250
200
150
4
50
0
Eon
0
10
0
20
30 A 40
IC
Fig. 13 Typ. turn on energy and switching
times versus collector current
10
mJ
Eon 8
6
4
VCE = 600 V
VGE = ±15 V
2
0
0
50
IC = 20 A
TVJ = 125°C
100 150
RG
200
a: 250
s
Fig. 15 Typ. turn on energy versus gate resistor
h 50
p A
40
ICM
30
RG = 68 :
TVJ = 125°C
20
1.0
0.5
0.0
0
Eoff
10
100
50
tf
0
20
30 A 40
IC
Fig. 14 Typ. turn off energy and switching
ttimes versus collector current
2.5
mJ
u Eoff 2.0
1.5
oEoff
e -1.0
VCE = 600 V
VGE = ±15 V
IC = 20 A
TVJ = 125°C
0.5
td(off)
1250
ns
1000
t
750
500
250
0.0
0
tf
0
50
100 150 200 : 250
RG
Fig.16 Typ. turn off energy and switching
times versus gate resistor
10
K/W
1
ZthJC
0.1
0.01
diode
IGBT
single pulse
10
0.001
0
0 200 400 600 800 1000 1200 V
VCE
Fig. 17 Reverse biased safe operating area
0.0001
0.00001 0.0001 0.001 0.01 0.1
1 s 10
t
Fig. 18 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
20071113a
-9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]