MMSF10N03ZR2 Ver la hoja de datos (PDF) - Motorola => Freescale

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MMSF10N03ZR2

SINGLE TMOS POWER MOSFET 10 AMPERES 30 VOLTS RDS(on) = 13 mΩ

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MMSF10N03Z

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

(Cpk ≥ 2.0) (1) (3) V(BR)DSS

30

—

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

—

—

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

—

ON CHARACTERISTICS(1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

(Cpk ≥ 2.0) (1) (3)

VGS(th)

1.0

—

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 10 Adc)

(VGS = 4.5 Vdc, ID = 5.0 Adc)

(Cpk ≥ 2.0) (1) (3) RDS(on)

—

—

Forward Transconductance (VDS = 15 Vdc, ID = 5.0 Adc) (1)

gFS

7.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

—

Coss

—

Crss

—

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 25 Vdc, ID = 1.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω) (1)

td(on)

—

tr

—

td(off)

—

tf

—

Gate Charge

See Figure 8

(VDS = 15 Vdc, ID = 2.0 Adc,

VGS = 10 Vdc) (1)

QT

—

Q1

—

Q2

—

Q3

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 10 Adc, VGS = 0 Vdc) (1)

VSD

—

(IS = 10 Adc, VGS = 0 Vdc, TJ = 125°C)

—

Reverse Recovery Time

trr

—

(IS = 2.3 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (1)

ta

—

tb

—

Reverse Recovery Stored Charge

QRR

—

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperatures.

(3) Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

Typ

Max

Unit

Vdc

—

—

65

—

mV/°C

µAdc

—

1.0

—

10

—

3.0

µAdc

Vdc

1.2

1.7

3.5

—

mV/°C

mΩ

10

13

13

18

13

—

Mhos

720

1010

pF

570

800

78

110

35

70

ns

105

210

970

1940

550

1100

46

64

nC

3.8

—

11

—

8.1

—

0.80

1.1

Vdc

0.70

—

460

—

ns

180

—

280

—

4.2

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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