MMDF3N06HD Ver la hoja de datos (PDF) - Motorola => Freescale

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MMDF3N06HD

TMOS Dual N-Channel Field Effect Transistors

Motorola => Freescale 

MMDF3N06HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

V(BR)DSS

Vdc

60

—

—

Zero Gate Voltage Drain Current

(VDS = 48 Vdc, VGS = 0 Vdc)

(VDS = 48 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

µAdc

—

0.001

1.0

—

0.05

25

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS(1)

IGSS

—

12

100

nAdc

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.3 Adc)

(VGS = 4.5 Vdc, ID = 2.5 Adc)

VGS(th)

1.0

—

Vdc

—

RDS(on)

mW

—

67.5

100

—

82.5

200

Forward Transconductance

(VDS = 15 Vdc, ID = 1.5 Adc)

gFS

Mhos

—

7.5

—

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

SWITCHING CHARACTERISTICS(2)

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

—

442

618

pF

—

97.6

137

—

24.4

34.2

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 30 Vdc, ID = 3.3 Adc,

VGS = 4.5 Vdc,

RG = 30 Ω)

td(on)

tr

td(off)

tf

—

10.6

22.1

ns

—

15.9

31.8

—

23.8

47.6

—

14.7

29.4

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

(VDD = 15 Vdc, ID = 3.0 Adc,

VGS = 10 Vdc,

RG = 9.1 Ω)

td(on)

tr

td(off)

tf

—

7.0

14

ns

—

4.8

9.6

—

32.4

64.8

—

14.2

28.4

Gate Charge

(See Figure 8)

(VDS = 30 Vdc, ID = 3.3 Adc,

VGS = 10 Vdc)

QT

—

14.5

29

nC

Q1

—

1.8

—

Q2

—

3.5

—

Q3

—

3.75

—

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 1.7 Adc, VGS = 0 Vdc)

(IS = 1.7 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

Vdc

—

0.78

1.2

—

0.65

—

Reverse Recovery Time

(IS = 1.7 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs)

trr

—

27.9

—

ns

ta

—

23

—

tb

—

4.9

—

Reverse Recovery Stored Charge

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

QRR

—

0.038

—

µC

2

Motorola TMOS Power MOSFET Transistor Device Data

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