MJD44E3 Ver la hoja de datos (PDF) - ON Semiconductor
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MJD44E3 Datasheet PDF : 3 Pages
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MJD44E3
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOODSEÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCECBDCDSFWYLFNamatooCoeoFNElIslllllCTllla(i(((((((((rÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎAeeeteCCVVIIIVVIIIaTCtyCCCCCCCHccce−gMuiCECCTHmtttHraAEe======rBoooEEBIRrAnCÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎmCIeRrrreTN111155====−dRIunCCAiiC0000EGtCmAA7ttR15RAtuaCoemAAAAAHG0ddeÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎaiCtpVfVTrTsofddddcciALtaaVteTdIdSeEfC,,cccctMfciRecEdcnd,,,,aIIRCTuiCBB)rÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ,tEcARtIIIIairIVuBBBBHmu,ISSrS==CnCIe111rCrfSaA=TaectrTn11eE====eTtetÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎsIsRtuEO200iCnoIt5II2rC0,RtBBASn=amm0VSA22ItmCVSÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎiAA1mBod==AoTddTEncMAl22dccI)tEC=aVdH))00cÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRgcoS)z0mm)el)I)CtSaAAhÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎgTddaeccIrC))aÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎcSte(TriÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCst=ic2ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ5_CÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎunlÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎess ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎotheÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎrwiseÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎnotÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎed) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎSVVtyCBIIdÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎhCECmEEttF+BEcsf((EbbssOStaaorÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎtt))l ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ1MÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0−−−−−−−−−i0n0ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎT00y−−−−−−−2..65pÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎM112112−−−−3a..ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ0550x ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎUVVmmpmmm−nddAAFsssccitÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
10
5
3
2
1
0.5
0.3
0.2
0.1
1
100 ms
1 ms
5 ms
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C SINGLE PULSE
23 5
10
20 30 50
100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Maximum Forward Bias
Safe Operating Area
TA TC
2.5 25
2 20
1.5 15
1 10
0.5 5
00
25
TC
TA
50
75
100
125
150
T, TEMPERATURE (°C)
Figure 2. Power Derating
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