MG25Q1BS11 Ver la hoja de datos (PDF) - Toshiba
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MG25Q1BS11 Datasheet PDF : 5 Pages
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TOSHIBA IGBT Module Silicon N - Channel IGBT
MG25Q1BS11
MG25Q1BS11
High Power Switching Applications
Motor Control Applications
Unit: mm
Enhancement-mode
The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
DC
Collector current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature Range
Isolation voltage
Screw torque (Terminal / mounting)
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
VIsol
―
JEDEC
JEITA
TOSHIBA
Rating
Unit
1200
V
±20
V
25
A
50
250
W
150
°C
−40 to 125
°C
2500
(AC 1 Minute)
V
2/3
N·m
―
―
2-33D2A
1
2003-04-11
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