MC-4R64CPE6C-653 Ver la hoja de datos (PDF) - NEC => Renesas Technology

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MC-4R64CPE6C-653

Direct Rambus™ DRAM RIMM™ Module 64M-BYTE (32M-WORD x 16-BIT)

NEC => Renesas Technology 

MC-4R64CPE6C

RIMM Module Current Profile

IDD

IDD1

RIMM module power conditions Note1

One RDRAM in Read Note2, balance in NAP mode

-845

MAX.

Unit

702.6

mA

-745

637.6

IDD2

One RDRAM in Read Note2, balance in Standby mode

-653

-845

552.6

1,020

mA

-745

940

IDD3

One RDRAM in Read Note2, balance in Active mode

-653

-845

825

1,230

mA

-745

1,120

IDD4

One RDRAM in Write, balance in NAP mode

-653

-845

975

662.6

mA

-745

607.6

IDD5

One RDRAM in Write, balance in Standby mode

-653

-845

527.6

980

mA

-745

910

IDD6

One RDRAM in Write, balance in Active mode

-653

-845

800

1,190

mA

-745

1,090

-653

950

Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage

patterns. Power does not include Refresh Current.

2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257 mA for the

following : VDD = 2.5 V, VTERM = 1.8 V, VREF = 1.4 V and VDIL = VREF − 0.5 V.

10

Preliminary Data Sheet M14805EJ2V0DS00

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