MBRB3030CTLG Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

MBRB3030CTLG

SWITCHMODE Power Rectifier

ON Semiconductor 

MBRB3030CTL

Suggested Method of Characterization

INDUCTOR

CURRENT

DUT

REVERSE

VOLTAGE

TIME (s)

Figure 11. Typical Voltage and Current UIS

Waveforms

Utilizing the UIS test circuit in Figure 10, devices are

tested to failure using inductors ranging in value from 0.01

to 159 mH. The reverse voltage and current waveforms are

acquired to determine the exact energy seen by the device

and the inductive current decay time. At least 4 distinct

inductors and 5 to 10 devices per inductor are used to

generate the characteristic current versus time relationship.

This relationship when coupled with the application circuit

conditions, defines the SOA of the device uniquely for this

application.

Example Application

The device used for this example was an MBR3035CT,

which is a 30 A (15 A per side) forward current, 35 V reverse

breakdown voltage rectifier. All parts were tested to

destruction at 25°C. The inductors used for the

characterization were 10, 3.0, 1.0 and 0.3 mH. The data

recorded from the testing were peak reverse current (Ip),

peak reverse breakdown voltage (BVR), maximum

withstand energy, inductance and inductor discharge time

(see Table 1). A plot of the Peak Reverse Current versus

Time at device destruction, as shown in Figure 12, was

generated. The area under the curve is the region of lower

reverse energy or lower stress on the device. This area is

known as the safe operating area or SOA.

120

100

80

60

UIS CHARACTERIZATION CURVE

40

20

SAFE OPERATING AREA

0

0 0.0005 0.001 0.0015 0.002 0.0025 0.003 0.0035 0.004

TIME (s)

Figure 12. Peak Reverse Current versus

Time for DUT

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