MBR30H90PT-E3 Ver la hoja de datos (PDF) - Vishay Semiconductors
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MBR30H90PT-E3 Datasheet PDF : 4 Pages
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MBR30H90PT & MBR30H100PT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR30H90PT
MBR30H100PT
IF = 15 A
TJ = 25 °C
Maximum instantaneous forward
voltage per diode (1)
IF = 15 A
IF = 30 A
TJ = 125 °C
TJ = 25 °C
VF
IF = 30 A
TJ = 125 °C
0.82
0.67
0.93
0.80
Maximum instantaneous reverse
current at rated DC blocking
voltage per diode (1)
TJ = 25 °C
TJ = 125 °C
IR
5.0
6.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UNIT
V
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR30H90PT
MBR30H100PT
Thermal resistance from junction to case per diode
RθJC
1.6
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
MBR30H100PT-E3/45
6.13
PACKAGE CODE BASE QUANTITY DELIVERY MODE
45
30/tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
0
25 50 75 100 125 150 175
Case Temperature (°C)
Figure 1. Forward Derating Curve
100
10
TJ = 175 °C
TJ = 150 °C
1
TJ = 125 °C
TJ = 100 °C
0.1
TJ = 25 °C
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 2. Typical Instantaneous Forward Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following: Document Number: 88678
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 25-Mar-08
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