MBR3035WT Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

MBR3035WT

Schottky Rectifier, 2 x 15 A

Vishay Semiconductors 

MBR3035WT/MBR3045WT

Vishay High Power Products Schottky Rectifier, 2 x 15 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum instantaneous reverse current IRM (1)

Threshold voltage

Forward slope resistance

Maximum junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

VF(TO)

rT

CT

LS

dV/dt

30 A

20 A

30 A

TJ = 25 °C

TJ = 125 °C

TEST CONDITIONS

TJ = 25 °C

TJ = 125 °C

Rated DC voltage

TJ = TJ maximum

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured from top of terminal to mounting plane

Rated VR

VALUES

0.76

0.60

0.72

1.0

100

0.29

13.8

800

7.5

10 000

UNITS

V

mA

V

mΩ

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction temperature range

TJ

Maximum storage temperature range

Maximum thermal resistance,

junction to case per leg

TStg

RthJC

DC operation

Typical thermal resistance,

case to heatsink

RthCS Mounting surface, smooth and greased

Approximate weight

Mounting torque

minimum

maximum

Marking device

Case style TO-247AC (JEDEC)

VALUES

- 65 to 150

- 65 to 175

UNITS

°C

1.40

°C/W

0.24

6

g

0.21

oz.

6 (5)

12 (10)

kgf · cm

(lbf · in)

MBR3035WT

MBR3045WT

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93448

Revision: 21-Aug-08

Share Link: