MBR20100CT-M3/4W(2010) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
MBR20100CT-M3/4W Datasheet PDF : 4 Pages
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New Product
MBR2090CT, MBR20100CT
Vishay General Semiconductor
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10 000
1000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
100
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
100
Junction to Case
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
PIN
123
0.635 (16.13)
0.625 (15.87)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.603 (15.32)
0.573 (14.55)
0.110 (2.79)
0.100 (2.54)
Document Number: 89192
For technical questions within your region, please contact one of the following:
Revision: 30-Nov-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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