MBM29LV800BE90PCV Ver la hoja de datos (PDF) - Fujitsu

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MBM29LV800BE90PCV

FLASH MEMORY CMOS 8 M (1 M × 8/512 K × 16) BIT

Fujitsu 

MBM29LV800TE/BE60/70/90

“Embedded EraseTM Algorithm” in “s FLOW CHART” illustrates the Embedded EraseTM Algorithm using typical

command strings and bus operations.

Erase Suspend/Resume

The Erase Suspend command allows the user to interrupt a Sector Erase operation and then perform data reads

from or programs to a sector not being erased. This command is applicable ONLY during the Sector Erase

operation which includes the time-out period for sector erase. Writting the Erase Suspend command during the

Sector Erase time-out results in immediate termination of the time-out period and suspension of the erase

operation.

Writing the Erase Resume command resumes the erase operation. The addresses are DON’T CARES when

writing the Erase Suspend or Erase Resume command.

When the Erase Suspend command is written during the Sector Erase operation, the device will take a maximum

of “tSPD” to suspend the erase operation. When the devices have entered the erase-suspended mode, the RY/

BY output pin and the DQ7 bit will be at logic “1”, and DQ6 will stop toggling. The user must use the address of

the erasing sector for reading DQ6 and DQ7 to determine if the erase operation has been suspended. Further

writes of the Erase Suspend command are ignored.

When the erase operation has been suspended, the devices default to the erase-suspend-read mode. Reading

data in this mode is the same as reading from the standard read mode except that the data must be read from

sectors that have not been erase-suspended. Successively reading from the erase-suspended sector will cause

DQ2 to toggle while the device is in the erase-suspend-read mode (See the section on DQ2) .

After entering the erase-suspend-read mode, the user can program the device by writing the appropriate com-

mand sequence for Program. This program mode is known as the erase-suspend-program mode. Again, pro-

gramming in this mode is the same as programming in the regular Program mode except that the data must be

programmed to sectors that are not erase-suspended. Successively reading from the erase-suspended sector

while the devices are in the erase-suspend-program mode will cause DQ2 to toggle. The end of the erase-

suspended Program operation is detected by the RY/BY output pin, Data polling of DQ7, or by the Toggle Bit I

(DQ6) which is the same as the regular Program operation. Note that DQ7 must be read from the Program address

while DQ6 can be read from any address.

To resume the operation of Sector Erase, the Resume command (30h) should be written. Any further writes of

the Resume command at this point will be ignored. Another Erase Suspend command can be written after the

chip has resumed erasing.

Extended Command

(1) Fast Mode

MBM29LV800TE/BE have Fast Mode function. This mode dispenses with the initial two unclock cycles required

in the standard program command sequence by writing Fast Mode command into the command register. In this

mode, the required bus cycle for programming is two cycles instead of four bus cycles in standard program

command. In Fast Mode, do not write any command other than the fast program/fast mode reset command. The

read operation is also executed after exiting this mode. To exit this mode, it is necessary to write Fast Mode

Reset command into the command register (Refer to “Embedded Programming Algorithm for Fast Mode” in “s

FLOW CHART”) . The VCC active current is required even CE = VIH during Fast Mode.

(2) Fast Programming

During Fast Mode, the programming can be executed with two bus cycles operation. The Embedded Program

Algorithm is executed by writing program set-up command (A0h) and data write cycles (PA/PD) (Refer to

“Embedded Programming Algorithm for Fast Mode” in “s FLOW CHART”) .

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