MBM29LV652UE-12TN Ver la hoja de datos (PDF) - Fujitsu

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Fabricante

MBM29LV652UE-12TN

FLASH MEMORY CMOS 64M (4M × 16) BIT

Fujitsu 

MBM29LV652UE-90/12

Table3 MBM29LV652UE Command Definitions

Command

Sequence

Bus

Write

Cycles

First Bus Second Bus Third Bus

Write Cycle Write Cycle Write Cycle

Fourth Bus

Read/Write

Cycle

Fifth Bus

Write Cycle

Sixth Bus

Write Cycle

Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data

Read/Reset

1 XXXh F0h — — — — — — — — — —

Read/Reset

3 XXXh AAh XXXh 55h XXXh F0h RA RD — — — —

Autoselect

3 XXXh AAh XXXh 55h XXXh 90h — — — — — —

Program

4 XXXh AAh XXXh 55h XXXh A0h PA PD — — — —

Chip Erase

6 XXXh AAh XXXh 55h XXXh 80h XXXh AAh XXXh 55h XXXh 10h

Sector Erase

6 XXXh AAh XXXh 55h XXXh 80h XXXh AAh XXXh 55h SA 30h

Erase Suspend

1 XXXh B0h — — — — — — — — — —

Erase Resume

1 XXXh 30h — — — — — — — — — —

Set to

Fast Mode

3 XXXh AAh XXXh 55h XXXh 20h — — — — — —

Fast

Program *1

2 XXXh A0h PA PD — — — — — — — —

Reset from Fast

Mode *1

2 XXXh 90h XXXh F0h — —

—

—

—

—

——

Extended Sector

Group Protection 4 XXXh 60h SPA 60h SPA 40h SPA SD — — — —

*2

Query *3

1 XXh 98h — — — — — — — — — —

Hi-ROM

Entry

3 XXXh AAh XXXh 55h XXXh 88h — — — — — —

Hi-ROM

Program *4

4 XXXh AAh XXXh 55h XXXh A0h PA PD — — — —

Hi-ROM

Exit *4

4 XXXh AAh XXXh 55h XXXh 90h XXXh 00h — — — —

9

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