MBM29F160TE Ver la hoja de datos (PDF) - Fujitsu

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MBM29F160TE

16M (2M X 8/1M X 16) BIT / MBM29F160TE/BE-55/-70/-90

Fujitsu 

MBM29F160TE-55/-70/-90/MBM29F160BE-55/-70/-90

Table 8 MBM29F160TE/BE Extended Command Definitions

Command

Sequence

Bus

Write

Cycles

Req'd

First Bus

Write Cycle

Addr Data

Second Bus

Write Cycle

Addr Data

Third Bus

Write Cycle

Addr Data

Word

Set to Fast Mode

3

Byte

555H

2AAH

555H

AAH

55H

20H

AAAH

555H

AAAH

Fast Program

(Note 1)

Word

Byte

2

XXXH

A0H

XXXH

PA

PD

—

—

Reset from Fast Word

2

XXXH 90H XXXH F0H

—

—

Mode (Note 1)

Byte

XXXH

XXXH (Note 3)

Query Command Word

2

55H

98H

—

—

—

—

(Note 2)

Byte

AAH

Fourth Bus

Read Cycle

Addr Data

—

—

—

—

—

—

—

—

SPA : Sector Address to be protected. Set sector address (SA) and (A6, A1, A0) = (0, 1, 0).

SD : Sector protection verify data. Output 01H at protected sector addresses and output 00H at unprotected sector

addresses.

Notes: 1. This command is valid while fast mode.

2. Addresses from system set to A0 to A6. The other addresses are “Don’t Care”.

3. The data "00H" is also acceptable.

Command Definitions

Device operations are selected by writing specific address and data sequences into the command register.

Writing incorrect address and data values or writing them in an improper sequence will reset the device to the

read mode. Table 7 defines the valid register command sequences. Note that the Erase Suspend (B0H) and

Erase Resume (30H) commands are valid only while the Sector Erase operation is in progress. Moreover both

Read/Reset commands are functionally equivalent, resetting the device to the read mode. Please note that

commands are always written at DQ0 to DQ7 and DQ8 to DQ15 bits are ignored.

Read/Reset Command

The read or reset operation is initiated by writing the Read/Reset command sequence into the command register.

Microprocessor read cycles retrive array data from the memory. The devices remain enabled for reads until the

command register contents are altered.

The device will automatically power-up in the Read/Reset state. In this case, a command sequence is not

required to read data. Standard microprocessor read cycles will retrieve array data. This default value ensures

that no spurious alteration of the memory contents occurs during the power transition. Refer to the AC Read

Characteristics and Waveforms for specific timing parameters.

Autoselect Command

Flash memories are intended for use in applications where the local CPU alters memory contents. As such,

manufactures and device codes must be accessible while the device resides in the target system. PROM

programmers typically access the signature codes by raising A9 to a high voltage. However, multiplexing high

voltage onto the address lines is not generally desired system design practice.

The device contains an Autoselect command operation to supplement traditional PROM programming

methodology. The operation is initiated by writing the Autoselect command sequence into the command register.

Following the last command write, a read cycle from address XX00H retrieves the manufacture code of 04H. A

read cycle from address XX01H for ×16 (XX02H for ×8) retrieves the device code (MBM29F160TE = D2H and

16

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