MB95110M Series
6. Flash Memory Program/Erase Characteristics
Parameter
Condi-
Value
tions
Min
Typ
Sector erase time
(4 Kbytes sector)
⎯
0.2*1
Sector erase time
(16 Kbytes sector)
⎯
0.5*1
Byte programming time
Program/erase cycle
⎯
32
⎯
10000
⎯
Power supply voltage at
program/erase
4.5
⎯
Flash memory data
retention time
20*3
⎯
Max
0.5*2
7.5*2
3600
⎯
5.5
⎯
Unit
Remarks
s
Excludes 00H programming prior
erasure.
s
Excludes 00H programming prior
erasure.
μs Excludes system-level overhead.
cycle
V
year Average TA = +85 °C
*1 : TA = + 25 °C, VCC = 5.0 V, 10000 cycles
*2 : TA = + 85 °C, VCC = 4.5 V, 10000 cycles
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
measurements into normalized value at +85 °C) .
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