II. Manufacturing Information
A. Description/Function:
B. Process:
C. Number of Device Transistors:
D. Fabrication Location:
E. Assembly Location:
F. Date of Initial Production:
±15kV ESD-Protected, Single CMOS Switch Debouncers
S3 (Standard 3 micron silicon gate CMOS)
284
Oregon, USA
Malaysia or Thailand
January, 1999
III. Packaging Information
A. Package Type:
4-Pin SOT143
B. Lead Frame:
Alloy 42 or Copper
C. Lead Finish:
Solder Plate
D. Die Attach:
Silver-Filled Epoxy
E. Bondwire:
Gold (1.0 mil dia.)
F. Mold Material:
Epoxy with silica filler
G. Assembly Diagram:
# 05-1601-0055
H. Flammability Rating:
Class UL94-V0
I. Classification of Moisture Sensitivity
per JEDEC standard JESD22-A112: Level 1
IV. Die Information
A. Dimensions:
43 x 30 mils
B. Passivation:
C. Interconnect:
Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
Aluminum/Si (Si = 1%)
D. Backside Metallization:
None
E. Minimum Metal Width:
3 microns (as drawn)
F. Minimum Metal Spacing: 3 microns (as drawn)
G. Bondpad Dimensions:
5 mil. Sq.
H. Isolation Dielectric:
I. Die Separation Method:
SiO2
Wafer Saw