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MAC4DLM-1 Datasheet PDF : 6 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MAC4DHM/D
Sensitive Gate TRIACS
Silicon Bidirectional Thyristors
MAC4DHM
MAC4DLM
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
• Four–Quadrant Triggering
• Blocking Voltage to 600 V
TRIACS
4.0 AMPERES RMS
MT2
600 VOLTS
• On–State Current Rating of 4.0 Amperes RMS at 93°C
• Low Level Triggering and Holding Characteristics
ORDERING INFORMATION
G
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DHM
MT1
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DHMT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DHM–1
MT2
MT1
MT2 G
CASE 369A–13
STYLE 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open)
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 93°C)
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width ≤ 10 msec, TC = 93°C)
Average Gate Power
(t = 8.3 msec, TC = 93°C)
Peak Gate Current (Pulse Width ≤ 10 msec, TC = 93°C)
Peak Gate Voltage (Pulse Width ≤ 10 msec, TC = 93°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
MAC4DHM
MAC4DLM
Symbol
VDRM
IT(RMS)
ITSM
I2t
PGM
PG(AV)
IGM
VGM
TJ
Tstg
Value
600
600
4.0
40
6.6
0.5
0.1
0.2
5.0
–40 to 110
–40 to 150
Unit
Volts
Amps
A2sec
Watts
Amps
Volts
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
RqJC
RqJA
RqJA
3.5
°C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1997
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