DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

HL14104 Ver la hoja de datos (PDF) - Hyundai Micro Electronics

Número de pieza
componentes Descripción
Fabricante
HL14104
Hyundai
Hyundai Micro Electronics Hyundai
HL14104 Datasheet PDF : 26 Pages
First Prev 21 22 23 24 25 26
HL15604
Electrical Characteristics for the Allowable Operating Ranges
Parameter
Hysteresis
Supply voltage detection
Input high level current
Input low level current
Input floating voltage
Pull-down resistance
Output off leakage current
Output high level voltage
Output low level voltage
Output middle level voltage*
Oscillator frequency
Current drain
Symbol
VH
SVD
IIH
IIL
VIF
RPD
IOFFH
VOH1
VOH2
VOH3
VOH4
VOL1
VOL2
VOL3
VOL4
VOL5
VMID1
VMID2
VMID3
VMID4
VMID5
fOSC
IDD1
IDD2
IDD3
Condition
min
typ
max unit
CE,SCK,SI
O.1VDD
V
1.5
2.0
3.0 V
CE,SCK,SI : V1 = 6.0V
5.0 µA
CE,SCK,SI : V1 = 0V
-5.0
µA
KIN1 to KIN5
0.05VDD V
KIN1 to KIN5 : VDD = 5.0V
SO : VO = 6.0V
50
100
250 k
6.0 µA
KS1 to KS6 : I0 = -500µA VDD -1.2 VDD -0.5
V
P1 to P4 : I0 = -1mA
VDD -1.0
V
SEG1 to SEG41 : I0 = -20µA VDD -1.0
V
COM1 to COM4 : I0= -100µA VDD -1.0
V
KS1 to KS6 : I0 = 25µA
0.2
0.5
1.5 V
P1 to P4 : I0 = 1mA
1.0 V
SEG1 to SEG41 : I0 = 20µA
1.0 V
COM1 to COM4 : I0 = 100µA
1.0 V
SO : I0 = 1 mA
0.1
0.5 V
COM1 to COM4 : 1/2 bias, 1/2 VDD
Io = ¡ ¾100µA
-1.0
1/2VDD
+1.0
V
SEG1 to SEG41 : 1/3 bias, 2/3VDD
Io = ¡ ¾20µA
-1.0
2/3VDD
+1.0
V
SEG1 to SEG41 : 1/3 bias, 1/3VDD
Io = ¡ ¾20µA
-1.0
1/3VDD
+1.0
V
COM1 to COM4 : 1/3 bias, 2/3VDD
Io = ¡ ¾100µA
-1.0
2/3VDD
+1.0
V
COM1 to COM4 : 1/3 bias, 1/3VDD
Io = ¡ ¾100µA
-1.0
1/3VDD
+1.0
V
OSC : C = 0
45
55
70 KHz
Sleep mode
100 µA
VDD = 6.0V, output open,
1/2 bias,fOSC = 38 KHz
VDD = 6.0V, output open,
1/3 bias,fOSC = 38 KHz
350
700 µA
300
600 µA
Note : *. Excluding the bias voltage generation divider resistor built into VCL1 and VCL2
22

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]