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Número de pieza
componentes Descripción
M59DR032EA85ZB6E Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
M59DR032EA85ZB6E
32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory
STMicroelectronics
M59DR032EA85ZB6E Datasheet PDF : 43 Pages
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M59DR032EA, M59DR032EB
Table 17. Read AC Characteristics
M59DR032E
Symbol Alt
Parameter
Test Condition
85
100
120
Unit
Min Max Min Max Min Max
t
AVAV
t
RC
Address Valid to Next
Address Valid
E = V
IL
, G = V
IL
85
100
120
ns
t
AVQV
t
ACC
Address Valid to Output
Valid (Random)
E = V
IL
, G = V
IL
85
100
120 ns
t
AVQV1
t
PAGE
Address Valid to Output
Valid (Page)
E = V
IL
, G = V
IL
30
35
45 ns
t
ELQX
(1)
t
LZ
Chip Enable Low to
Output Transition
G = V
IL
0
0
0
ns
t
ELQV
(2)
t
CE
Chip Enable Low to
Output Valid
G = V
IL
85
100
120 ns
t
GLQX
(1)
t
OLZ
Output Enable Low to
Output Transition
E = V
IL
0
0
0
ns
t
GLQV
(2)
t
OE
Output Enable Low to
Output Valid
E = V
IL
25
25
35 ns
t
EHQX
t
OH
Chip Enable High to
Output Transition
G = V
IL
0
0
0
ns
t
EHQZ
(1)
t
HZ
Chip Enable High to
Output Hi-Z
G = V
IL
20
25
35 ns
t
GHQX
t
OH
Output Enable High to
Output Transition
E = V
IL
0
0
0
ns
t
GHQZ
(1)
t
DF
Output Enable High to
Output Hi-Z
E = V
IL
20
25
35 ns
t
AXQX
t
OH
Address Transition to
Output Transition
E = V
IL
, G = V
IL
0
0
0
ns
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
ELQV
- t
GLQV
after the falling edge of E without increasing t
ELQV
.
25/43
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