M59DR016 Ver la hoja de datos (PDF) - STMicroelectronics
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M59DR016 Datasheet PDF : 37 Pages
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M59DR016C, M59DR016D
Table 24. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI Input Leakage Current
0V ≤ VIN ≤ VDD
±1
µA
ILO Output Leakage Current
0V ≤ VOUT ≤ VDD
±5
µA
ICC1
Supply Current
(Read Mode)
E = VIL, G = VIH, f = 6MHz
10
20
mA
ICC2
Supply Current
(Power Down)
RP = VSS ± 0.2V
2
10
µA
ICC3 Supply Current (Standby)
E = VDD ± 0.2V
15
50
µA
ICC4 (1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5 (1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
20
40
mA
IPP1
VPP Supply Current
(Program or Erase)
VPP = 12V ± 0.6V
5
10
mA
IPP2
VPP Supply Current
(Standby or Read)
VPP ≤ VCC
VPP = 12V ± 0.6V
0.2
5
µA
100
400
µA
VIL Input Low Voltage
–0.5
0.4
V
VIH Input High Voltage
VDDQ –0.4
VDDQ + 0.4 V
VOL Output Low Voltage
IOL = 100µA
0.1
V
VOH
Output High Voltage
CMOS
IOH = –100µA
VDDQ –0.1
V
VPP (2,3)
VPP Supply Voltage
(Program or Erase)
–0.4
Double Word Program
11.4
VDD + 0.4
V
12.6
V
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation VPP is don’t care.
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