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Número de pieza
componentes Descripción
DS1112SG57 Ver la hoja de datos (PDF) - Dynex Semiconductor
Número de pieza
componentes Descripción
Fabricante
DS1112SG57
Rectifier Diode
Dynex Semiconductor
DS1112SG57 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
DS1112SG
10000
Conditions:
T
j
= 150
˚
C
V
R
= 100V
I
F
= 1000A
35
400
I
2
t =
Î
2
x t
2
30
350
1000
25
300
I
2
t
20
250
15
200
100
0.1
I
F
Q
S
dI
F
/dt
I
RM
1.0
10
100
Rate of decay of forward current, dI
F
/dt - (A/µs)
Fig.4 Total stored charge
0.1
Anode side cooled
10
150
5
100
0
50
1
10 1 2 3 5 10 20 50
ms
Cycles at 50Hz
Duration
Fig.5 Surge (non-repetitive) forward current vs time (with
50% V
RRM
at T
case
125˚C)
Double side cooled
0.01
0.001
0.001
0.01
Conduction
Effective thermal resistance
Junction to case
˚
C/W
d.c.
Halfwave
3 phase 120
˚
6 phase 60
˚
Double side
0.032
0.034
0.044
0.057
Single side
0.064
0.066
0.076
0.089
0.1
1.0
10
Time - (s)
Fig.6 Maximum (limit) transient thermal impedance -
junction to case
5/7
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