M36WT864 Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

M36WT864

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36WT864TF, M36WT864BF

Table 5. Flash Standard Commands

Bus Operations

Commands

1st Cycle

2nd Cycle

Op.

Add

Data

Op.

Add

Data

Read Array

1+

Write

BKA

FFh

Read

WA

RD

Read Status Register

1+

Write

BKA

70h

Read

BKA(2)

SRD

Read Electronic Signature

1+

Write

BKA

90h

Read

BKA(2)

ESD

Read CFI Query

1+

Write

BKA

98h

Read

BKA(2)

QD

Clear Status Register

1

Write

BKA

50h

Block Erase

2

Write

BKA

20h

Write

BA

D0h

Bank Erase

2

Write

BKA

80h

Write

BKA

D0h

Program

2

Write

BKA

40h or 10h

Write

WA

PD

Program/Erase Suspend

1

Write

X

B0h

Program/Erase Resume

1

Write

X

D0h

Protection Register Program

2

Write

PRA

C0h

Write

PRA

PRD

Set Configuration Register

2

Write

CRD

60h

Write

CRD

03h

Block Lock

2

Write

BKA

60h

Write

BA

01h

Block Unlock

2

Write

BKA

60h

Write

BA

D0h

Block Lock-Down

2

Write

BKA

60h

Write

BA

2Fh

Note: 1. X = Don't Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,

QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection

Register Data, CRD=Configuration Register Data.

2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.

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