M29W640FT
M29W640FB
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block)
3V Supply Flash Memory
Features summary
Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase,
Read
– VPP =12 V for Fast Program (optional)
Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
Programming Time
– 10 µs per Byte/Word typical
– 4 Words/8 Bytes Program
135 memory blocks
– 1 Boot Block and 7 Parameter Blocks,
8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
Program/Erase Controller
– Embedded Byte/Word Program algorithms
Program/Erase Suspend and Resume
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
VPP/WP pin for Fast Program and Write Protect
Temporary Block Unprotection mode
Common Flash Interface
– 64-bit Security Code
Extended Memory Block
– Extra block used as security block or to
store additional information
Low power consumption
– Standby and Automatic Standby
100,000 Program/Erase cycles per block
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6x8mm
Electronic Signature
– Manufacturer Code: 0020h
Table 1. Device Codes
Root Part Number
M29W640FT
M29W640FB
Device Code
22EDh
22FDh
ECOPACK® packages
December 2005
Rev3
1/72
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