M29W160EB Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

M29W160EB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

Figure 7. Data Polling Flowchart

START

READ DQ5 & DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

NO DQ5

=1

YES

READ DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

FAIL

PASS

AI03598

M29W160ET, M29W160EB

Figure 8. Data Toggle Flowchart

START

READ DQ6

READ

DQ5 & DQ6

DQ= 6

NO

TOGGLE

YES

NO DQ5

=1

YES

READ DQ6

TWICE

DQ= 6

NO

TOGGLE

YES

FAIL

PASS

AI01370C

MAXIMUM RATING

Stressing the device above the rating listed in the

Absolute Maximum Ratings" table may cause per-

manent damage to the device. Exposure to Abso-

lute Maximum Rating conditions for extended

periods may affect device reliability. These are

stress ratings only and operation of the device at

these or any other conditions above those indicat-

ed in the Operating sections of this specification is

not implied. Refer also to the STMicroelectronics

SURE Program and other relevant quality docu-

ments.

Table 8. Absolute Maximum Ratings

Symbol

Parameter

Min

Max

TBIAS

Temperature Under Bias

–50

125

TSTG

Storage Temperature

–65

150

VIO

Input or Output Voltage (1,2)

–0.6

VCC +0.6

VCC

Supply Voltage

–0.6

4

VID

Identification Voltage

–0.6

13.5

Note: 1. Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions.

2. Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions.

Unit

°C

°C

V

V

V

19/40

Share Link: