M295V400B-120M1R Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
M295V400B-120M1R
STMicroelectronics
M295V400B-120M1R Datasheet PDF : 34 Pages
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M29F400T, M29F400B
Table 14A. Read AC Characteristics
(TA = 0 to 70°C, –40 to 85°C or –40 to 125°C)
M29F400T / M29F400B
Symbol Alt
Parameter
Test
Condition
-55
High Speed
In terface
-70
Standard
Interface
Min Max Min Max
tAVAV
tRC Address Valid to Next Address Valid
E = VIL,
G = VIL
55
70
tAVQV
tACC Address Valid to Output Valid
E = VIL,
G = VIL
55
70
tELQX (1)
tLZ Chip Enable Low to Output Transition
G = VIL
0
0
tELQV (2)
tCE Chip Enable Low to Output Valid
G = VIL
55
70
tGLQX (1) tOLZ Output Enable Low to Output Transition
E = VIL
0
0
tGLQV (2) tOE Output Enable Low to Output Valid
E = VIL
30
30
tEHQX
tOH Chip Enable High to Output Transition
G = VIL
0
0
tEHQZ (1) tHZ Chip Enable High to Output Hi-Z
G = VIL
15
20
tGHQX
tOH Output Enable High to Output Transition E = VIL
0
0
tGHQZ (1) tDF Output Enable High to Output Hi-Z
E = VIL
15
20
tAXQX
tOH Address Transition to Output Transition
E = VIL,
G = VIL
0
0
tPLYH (1,3)
tRRB
tREADY
RP Low to Read Mode
10
10
tPHEL
tRH RP High to Chip Enable Low
50
50
tPLPX
tRP RP Pulse Width
500
500
tELBL
tELBH
tBLQZ
tELFL
tELFH
tFLQZ
Chip Enable to BYTE Switching Low or
High
BYTE Switching Low to Output
High Z
5
5
15
20
tBHQV
tFHQV
BYTE Switching High to Output
Valid
30
30
Notes: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
3. To be considered only if the Reset pulse is given while the memory is in Erase or Program mode.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
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