M28R400C Ver la hoja de datos (PDF) - STMicroelectronics
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M28R400C Datasheet PDF : 48 Pages
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M28R400CT, M28R400CB
Table 14. DC Characteristics
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI Input Leakage Current
ILO Output Leakage Current
0V≤ VIN ≤ VDDQ
0V≤ VOUT ≤VDDQ
±1
µA
±10
µA
IDD Supply Current (Read)
E = VSS, G = VIH, f = 5MHz
10
20
mA
IDD1
Supply Current (Stand-by or
Automatic Stand-by)
E = VDDQ ± 0.2V,
RP = VDDQ ± 0.2V
15
50
µA
IDD2
Supply Current
(Reset)
RP = VSS ± 0.2V
15
50
µA
IDD3 Supply Current (Program)
Program in progress
VPP = 12V ± 5%
Program in progress
VPP = VDD
10
20
mA
10
20
mA
IDD4 Supply Current (Erase)
Erase in progress
VPP = 12V ± 5%
Erase in progress
VPP = VDD
5
20
mA
5
20
mA
IDD5
Supply Current
(Program/Erase Suspend)
E = VDDQ ± 0.2V,
Erase suspended
50
µA
IPP
Program Current
(Read or Stand-by)
VPP > VDD
400
µA
IPP1
Program Current
(Read or Stand-by)
VPP ≤ VDD
5
µA
IPP2 Program Current (Reset)
RP = VSS ± 0.2V
5
µA
IPP3 Program Current (Program)
Program in progress
VPP = 12V ± 5%
Program in progress
VPP = VDD
10
mA
5
µA
IPP4 Program Current (Erase)
Erase in progress
VPP = 12V ± 5%
Erase in progress
VPP = VDD
10
mA
5
µA
VIL Input Low Voltage
–0.5
0.4
V
VIH Input High Voltage
VDDQ –0.4
VDDQ +0.4 V
VOL Output Low Voltage
IOL = 100µA, VDD = VDD min,
VDDQ = VDDQ min
0.1
V
VOH Output High Voltage
IOH = –100µA, VDD = VDD min,
VDDQ = VDDQ min
VDDQ –0.1
V
VPP1
Program Voltage (Program or
Erase operations)
1.65
2.2
V
VPPH
Program Voltage
(Program or Erase
operations)
11.4
12.6
V
VPPLK
Program Voltage
(Program and Erase lock-out)
1
V
VLKO
VDD Supply Voltage (Program
and Erase lock-out)
2
V
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