M28F420 Ver la hoja de datos (PDF) - STMicroelectronics
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M28F420 Datasheet PDF : 38 Pages
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M28F410, M28F420
Table 18B. Write AC Characteristics, Write Enable Controlled (1)
(TA = –40 to 125°C; VPP = 12V ± 5%)
Symbol Alt
Parameter
M28F410 / 420
-100
-120
VCC = 5V ± 10% VCC = 5V ± 10%
EPROM
Interface
EPROM
Interface
tAVAV
tWC Write Cycle Time
tPHWL
tPS Power Down High to Write Enable Low
tELWL
tCS Chip Enable Low to Write Enable Low
tWLWH
tWP Write Enable Low to Write Enable High
tDVWH
tDS Data Valid to Write Enable High
tWHDX
tDH Write Enable High to Data Transition
tWHEH
tCH Write Enable High to Chip Enable High
tWHWL tWPH Write Enable High to Write Enable Low
tAVWH
tAS Address Valid to Write Enable High
tPHHWH (5)
tVPHWH (5)
tPHS
Power Down VHH (Boot Block Unlock) to Write
Enable High
tVPS VPP High to Write Enable High
tWHAX
tAH Write Enable High to Address Transition
tWHQV1 (2, 3)
Write Enable High to Output Valid (Word/Byte
Program)
tWHQV2 (2, 3)
Write Enable High to Output Valid (Boot Block
Erase)
Min Max Min Max
100
120
210
210
0
0
60
70
60
60
0
0
10
10
40
50
60
60
100
100
100
100
10
10
7
7
0.4
0.4
tWHQV3 (2)
Write Enable High to Output Valid (Parameter
Block Erase)
tWHQV4 (2)
Write Enable High to Output Valid (Main Block
Erase)
tQVPH (5)
tQVVPL (5)
tPHH Output Valid to Reset/Power Down High
Output Valid to VPP Low
tPHBR (4, 5)
Reset/Power Down High to Boot Block Relock
Notes: 1. See Figure 3 and Table 8 for timing measurements.
2. Time is measured to Status Register Read giving bit b7 = ’1’.
3. For Program or Erase of the Boot Block RP must be at VHH.
4. Time required for Relocking the Boot Block.
5. Sampled only, not 100% tested.
0.4
0.4
0.7
0.7
0
0
0
0
100
100
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
sec
sec
sec
ns
ns
ns
18/38
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