LX5506E Ver la hoja de datos (PDF) - Microsemi Corporation
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LX5506E Datasheet PDF : 7 Pages
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INTEGRATED PRODUCTS
LX5506E
InGaP HBT 4 – 6GHz Power Amplifier
PRELIMINARY DATA SHEET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, the following specifications apply over the following test conditions: Vc = 3.3V, Icq = 100mA, TA = 25°C
PARAMETER
CONDITION SYMBOL MIN. TYP.
Frequency Range
f
5.15
Output Power at 1dB Compression
Pout
25
27
Power Gain at Pout=19dBm
Gp
23
EVM at Pout=19dBm
64QAM/54Mbps
3
Total Current at Pout=19dBm
Ic_total
200
Quiescent Current
Icq
100
Bias Control Reference Current
For Icq=100mA
Iref
2
Small-Signal Gain
S21
22
Gain Flatness
Gain Variation Over Temperature
Over 200MHz
-20 to +85oC
∆S21
∆S21
+/-0.5
+/-1
Input Return Loss
S11
-20
Output Return Loss
S22
-10
Reverse Isolation
S12
-40
Second Harmonic
Pout = 19dBm
-40
Third Harmonic
Pout = 19dBm
-40
Detector Response
Pout = 19dBm
DET
1.7
Ramp-On Time
10~90%
tON
100
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
MAX.
5.35
-10
MIN.
5.7
25
TYP.
27
21
3.5
210
100
2
20
+/-0.5
+/-1
-12
-10
-40
-40
-40
1.2
100
MAX.
5.85
-10
UNIT
GHz
dBm
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
V
ns
Copyright 2000
Rev. 1.0, 2003-01-10
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
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